RF Magnetron Sputtering of NdS thin films of Si and GaAs substrates ( With (100) orientation).

Send an email to marc.cahay@uc.edu for information regarding any related publications. We have grown NdS thin film (a few 1000 angstroms thick) on Si and GaAs (100) substrate. XRD analysis of the films under grazing angle on our Rigaku system seem to indicate the growth of the cubic phase of NdS. The extracted lattice constant was found equal to 5.6341 A and 5.6629 A for NdS thin films on Si and GaAs substrates, respectively.

Optical micrograph of NdS thin film grown on Si substrate is shown here. The film is see to be fairly smooth. We are currently doing AFM measurements on the film.

Thin film XRD spectrum at a grazing angle of 1 degree for a NdS thin film grown on Si (100) substrate. For comparison, we also shown the XRD spectrum taking at the same grazing angle for the Si (100) bare substrate.

Thin film XRD spectrum at a grazing angle of 1 degree for a NdS thin film grown on GaAs (100) substrate. For comparison, we also shown the XRD spectrum taking at the same grazing angle for the Si (100) bare substrate.
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