Modeling of Heterojunction Bipolar Transistors

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Refereed Journals

  • S. Ekbote, M. Cahay, K. Roenker, and T. Kumar, "Space-Charge Recombination Currents and Their Influence on the DC Current Gain of AlGaAs/GaAs Pnp Heterojunction Bipolar Transistors", Journal of Applied Physics, Vol.86, pp.7065-7070 (1999). JAP86, 1999
  • S. Datta, K. P. Roenker, and M. Cahay "A Thermionic-Emission-Diffusion Model For Graded Base Pnp Heterojunction Bipolar Transistors", Journal of Applied Physics, Vol.83, p.8036 (1998). JAP 83, 1998
  • S. Datta, K. P. Roenker, M. Cahay, and L. M. Lunardi, "Analytical Modeling of Pnp InP/InGaAs Heterojunction Bipolar Transistors", Solid State Electronics, Vol. 44, 1331 (2000).
  • S. Datta, K. P. Roenker, and M. Cahay, "A Gummel-Poon Model for Pnp Heterojunction Bipolar Transistors with a Compositionally Graded Base", Solid State Electronics, Vol. 44, 991 (2000).
  • S. Ekbote, M. Cahay and K. Roenker, "Emitter-Base Bias Dependence of The Collector Current Ideality Factor in Abrupt Pnp AlGaAs/GaAs Heterojunction Bipolar Transistors", Journal of Applied Physics, Vol. 87, 1467 (2000).
  • S. Datta, K. P. Roenker and M. Cahay, "Emitter Series Resistance Effect of Multiple Heterojunction Contacts for Pnp Heterojunction Bipolar Transistors", Solid State Electronics, Vol. 43, pp.1299-1305 (1999).
  • K. Roenker, S. Frimel, and M. Cahay, "Effects of Optical Absorption at the Emitter-Base Junction in Npn Heterojunction Bipolar Transistors", IEEE transactions on Electron Devices, Vol.46, pp.669-674 (1999).
  • S. Datta, K. P. Roenker and M. Cahay, "Hole Transport and Quasi-Fermi Level Splitting at the Emitter-Base Junction in Pnp Heterojunction Bipolar Transistors", Journal of Applied Physics, Vol.85, pp.1949-1955 (1999).
  • S. Datta, K. P. Roenker, M. Cahay and W. E. Stanchina, "Implications of Hole Versus Electron Transport Properties For High Speed Pnp Heterojunction Bipolar Transistors", Solid State Electronics, Vol.43, pp.73-79 (1999).
  • S. Datta, S. Shi, K. P. Roenker, M. Cahay, and W. Stanchina, "Simulation and Design of InP-Based PNP Heterojunction Bipolar Transistors", IEEE Transactions on Electron Devices, Vol.45, pp.1634-1643 (1998).
  • T. Kumar, M. Cahay, and K. Roenker, " Ensemble Monte Carlo Analysis of Self-heating Effects in Graded Heterojunction Bipolar Transistors", Journal of Applied Physics, Vol. 83(4), pp.1869-1877 (1998).
  • T. Kumar, M. Cahay, and K. Roenker, "Hole Tunneling Through the Emitter-base Junction of Heterojunction Bipolar Transistors" Physical Review B, Vol.56(8), pp.4836-4844 (1997).
  • T. Kumar, M. Cahay, and K. Roenker, "Trends in the Emitter-Base Bias Dependence of the Base Transit Time Through Abrupt Heterojunction Bipolar Transistors", Journal of Applied Physics, Vol. 80(9), pp.5478-5482 (1996).
  • S. Shi, K. P. Roenker, T. Kumar, M. Cahay and W. E. Stanchina, "Simulation of PNP InAlAs/InGaAs Heterojunction Bipolar Transistors", IEEE Transactions on Electron Devices, Vol. 43(9), pp.1466-1467 (1996).
  • T. Conklin, S. Naugle, S. Shi, S. Frimel, K. Roenker, T. Kumar, M. Cahay, and W. E. Stanchina, "Inclusion of Tunneling and Ballistic Transport Effects in an Analytical Approach to Modeling of NPN InP-Based Heterojunction Bipolar Transistors", Superlattices and Microstructures. Vol.18(1),pp.21-32 (1995).
  • S. Shi, K. P. Roenker, T. Kumar, M. Cahay, and W. E. Stanchina, "Simulation Study of InP-Based PNP Heterojunction Bipolar Transistors and Incorporation of Nonclassical Effects", Superlattices and Microstructures, Vol.18(1),pp.9-19 (1995).
  • T. Kumar, M. Cahay, S. Shi, K. Roenker, and W. E. Stanchina, "A Hybrid Model to Calculate the Forward Delay Time of Abrupt Heterojunction Bipolar Transistors", Superlattices and Microstructures, Vol.18(1),pp.1-8 (1995).

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