Modeling of Heterojunction Bipolar Transistors
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Refereed Journals
S. Ekbote, M. Cahay, K. Roenker, and T. Kumar,
"Space-Charge Recombination Currents and Their Influence on
the DC Current Gain of AlGaAs/GaAs Pnp Heterojunction Bipolar
Transistors", Journal of Applied Physics, Vol.86, pp.7065-7070 (1999).
JAP86, 1999
S. Datta, K. P. Roenker, and M. Cahay "A Thermionic-Emission-Diffusion Model For
Graded Base Pnp Heterojunction Bipolar Transistors", Journal
of Applied Physics, Vol.83, p.8036 (1998).
JAP 83, 1998
S. Datta, K. P. Roenker, M. Cahay, and L. M. Lunardi,
"Analytical Modeling of Pnp InP/InGaAs Heterojunction
Bipolar Transistors", Solid State Electronics, Vol. 44, 1331 (2000).
S. Datta, K. P. Roenker, and M. Cahay,
"A Gummel-Poon Model for Pnp Heterojunction
Bipolar Transistors with a Compositionally Graded Base",
Solid State Electronics, Vol. 44, 991 (2000).
S. Ekbote, M. Cahay and K. Roenker,
"Emitter-Base Bias Dependence of The Collector Current Ideality
Factor in Abrupt Pnp AlGaAs/GaAs Heterojunction Bipolar Transistors",
Journal of Applied Physics, Vol. 87, 1467 (2000).
S. Datta, K. P. Roenker and M. Cahay,
"Emitter Series Resistance Effect of Multiple Heterojunction
Contacts for Pnp Heterojunction Bipolar Transistors",
Solid State Electronics, Vol. 43, pp.1299-1305 (1999).
K. Roenker, S. Frimel, and M. Cahay, "Effects
of Optical Absorption at the Emitter-Base Junction
in Npn Heterojunction Bipolar Transistors",
IEEE transactions on Electron Devices, Vol.46, pp.669-674 (1999).
S. Datta, K. P. Roenker and M. Cahay,
"Hole Transport and Quasi-Fermi Level Splitting at the Emitter-Base
Junction in Pnp Heterojunction Bipolar Transistors",
Journal of Applied Physics, Vol.85, pp.1949-1955 (1999).
S. Datta, K. P. Roenker, M. Cahay and W. E. Stanchina,
"Implications of Hole Versus Electron Transport Properties
For High Speed Pnp Heterojunction Bipolar Transistors",
Solid State Electronics, Vol.43, pp.73-79 (1999).
S. Datta, S. Shi, K. P. Roenker, M. Cahay, and W. Stanchina,
"Simulation and Design of InP-Based PNP Heterojunction Bipolar
Transistors", IEEE Transactions on Electron Devices, Vol.45,
pp.1634-1643 (1998).
T. Kumar, M. Cahay, and K. Roenker,
" Ensemble Monte Carlo Analysis of Self-heating Effects in
Graded Heterojunction Bipolar Transistors",
Journal of Applied Physics, Vol. 83(4), pp.1869-1877 (1998).
T. Kumar, M. Cahay, and K. Roenker, "Hole Tunneling Through
the Emitter-base Junction of Heterojunction Bipolar Transistors"
Physical Review B, Vol.56(8), pp.4836-4844 (1997).
T. Kumar, M. Cahay, and K. Roenker, "Trends in the Emitter-Base
Bias Dependence of the Base Transit Time Through Abrupt
Heterojunction Bipolar Transistors",
Journal of Applied Physics, Vol. 80(9), pp.5478-5482 (1996).
S. Shi, K. P. Roenker, T. Kumar, M. Cahay and W. E. Stanchina,
"Simulation of PNP InAlAs/InGaAs Heterojunction Bipolar Transistors",
IEEE Transactions on Electron Devices, Vol. 43(9), pp.1466-1467 (1996).
T. Conklin, S. Naugle, S. Shi, S. Frimel, K. Roenker,
T. Kumar, M. Cahay, and W. E. Stanchina,
"Inclusion of Tunneling and Ballistic Transport Effects in
an Analytical Approach to Modeling of NPN InP-Based Heterojunction
Bipolar Transistors",
Superlattices and Microstructures. Vol.18(1),pp.21-32 (1995).
S. Shi, K. P. Roenker, T. Kumar, M. Cahay, and W. E. Stanchina,
"Simulation Study of InP-Based PNP Heterojunction Bipolar
Transistors and Incorporation of Nonclassical Effects",
Superlattices and Microstructures, Vol.18(1),pp.9-19 (1995).
T. Kumar, M. Cahay, S. Shi, K. Roenker, and W. E. Stanchina,
"A Hybrid Model to Calculate the Forward Delay Time
of Abrupt Heterojunction Bipolar Transistors",
Superlattices and Microstructures, Vol.18(1),pp.1-8 (1995).