Carrier Transport in Semiconductors
Send an email
to marc.cahay@uc.edu
for information regarding any related publications.
Refereed Journals
T. Kumar, M. Cahay, S. Shi, K. Roenker, and W. E. Stanchina,
"Limit of validity of the thermionic emission treatment
of electron injection across emitter-base junctions in
Heterojunction Bipolar Transistors",
Journal of Applied Physics, Vol.77(11), pp.5786-5792 (1995).
T. Kumar, M. Cahay, S. Shi, and K. Roenker,
"Influence of Quantum-Mechanical Reflection
At The Emitter-Base Spike On The Base Transit Time Through Abrupt
Heterojunction Bipolar Transistors",
Journal of Applied Physics, Vol.78(11), pp.6814-6817 (1995).
M.A.Osman, M.Cahay and H.L. Grubin,
``Effect of Valence Band Anisotropy on the Ultrafast Relaxation
of Photoexcited Carriers in GaAs",
Solid State Electronics, Vol.32(12), pp.1911-1914 (1989)
M.Cahay and E. Kartheuser,
``Polarizability of Donors in Polar Semiconductors",
Phys. Stat. Sol.(B), Vol.121, pp.345-356 (1984)
M.Cahay and E. Kartheuser,
``Effect of Chemical Shift on Polarizabilities
of Donors in Semiconductors",
Solid State Communications, Vol.48(9), pp.781-783 (1983)